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a2t21s160--12sr3 1 rf device data freescale semiconductor, inc. rf power ldmos transistor n--channel enhancement--mode lateral mosfet this 38 w rf power ldmos transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 mhz. 2100 mhz ? typical single--carrier w--cdma performance: v dd =28vdc, i dq = 600 ma, p out = 38 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) irl (db) 2110 mhz 18.2 33.6 6.8 ?33.4 ?18 2140 mhz 18.3 33.0 6.7 ?33.3 ?15 2170 mhz 18.4 32.9 6.7 ?33.0 ?13 features ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? optimized for doherty applications document number: a2t21s160--12s rev. 0, 8/2015 freescale semiconductor technical data 2110?2170 mhz, 38 w avg., 28 v airfast rf power ldmos transistor a2t21s160--12sr3 figure 1. pin connections ni--780s--2l2l (top view) rf in /v gs vbw (1) vbw (1) 4 2 13 rf out /v ds 1. device cannot operate with v dd current supplied through pin 2 and pin 4. ? freescale semiconductor, inc., 2015. all rights reserved.
2 rf device data freescale semiconductor, inc. a2t21s160--12sr3 table 1. maximum ratings rating symbol value unit drain--source voltage v dss ?0.5, +65 vdc gate--source voltage v gs ?6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg ?65 to +150 ? c case operating temperature range t c ?40 to +150 ? c operating junction temperature range (1,2) t j ?40 to +225 ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 73 ? c, 38 w cw, 28 vdc, i dq = 600 ma, 2140 mhz r ? jc 0.30 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 4. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =32vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc on characteristics gate threshold voltage (v ds =10vdc,i d = 151 ? adc) v gs(th) 1.4 1.8 2.2 vdc gate quiescent voltage (v dd =28vdc,i d = 600 madc, measured in functional test) v gs(q) 2.2 2.6 3.0 vdc drain--source on--voltage (v gs =10vdc,i d =1.5adc) v ds(on) 0.1 0.2 0.3 vdc functional tests (4) (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 600 ma, p out = 38 w avg., f = 2170 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 17.7 18.4 20.7 db drain efficiency ? d 31.1 32.9 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 6.3 6.7 ? db adjacent channel power ratio acpr ? ?33.0 ?30.9 dbc input return loss irl ? ?13 ?7 db 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http:// www.freescale.com/rf/calculators. 3. refer to an1955 , thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf and search for an1955. 4. part internally matched both on input and output. (continued)
a2t21s160--12sr3 3 rf device data freescale semiconductor, inc. table 4. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit load mismatch (in freescale test fixture, 50 ohm system) i dq = 600 ma, f = 2140 mhz vswr 10:1 at 32 vdc, 190 w cw output power (3 db input overdrive from 140 w cw rated power) no device degradation typical performance (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 600 ma, 2110?2170 mhz bandwidth p out @ 1 db compression point, cw p1db ? 140 ? w am/pm (maximum value measured at the p3db compression point across the 2110?2170 mhz bandwidth) ? ? ?16.4 ? ? vbw resonance point (imd third order intermodulation inflection point) vbw res ? 90 ? mhz gain flatness in 60 mhz bandwidth @ p out =38wavg. g f ? 0.3 ? db gain variation over temperature (?30 ? cto+85 ? c) ? g ? 0.011 ? db/ ? c output power variation over temperature (?30 ? cto+85 ? c) ? p1db ? 0.009 ? db/ ? c table 5. ordering information device tape and reel information package a2t21s160--12sr3 r3 suffix = 250 units, 44 mm tape width, 13--inch reel ni--780s--2l2l
4 rf device data freescale semiconductor, inc. a2t21s160--12sr3 figure 2. a2t21s160--12sr3 test circuit component layout d65896 a2t21s160--12s rev. 1 c1 cut out area c7 r1 c17 c16 c8 r2 c2 c4 c3 c5 c9 c10 c15 c18 c14 c13 c11 c12 c6 v gg v gg v dd v dd table 6. a2t21s160--12sr3 test circuit component designations and values part description part number manufacturer c1, c2, c3, c4, c5, c6 10 ? f chip capacitors c5750x7s2a106m230kb tdk c7, c8, c10, c11, c14, c17 9.1 pf chip capacitors atc100b9r1ct500xt atc c9 0.8 pf chip capacitor atc100b0r8bt500xt atc c12 0.9 pf chip capacitor atc100b0r9bt500xt atc c13, c18 0.1 pf chip capacitors atc600f0r1bt250xt atc c15 470 ? f, 63 v electrolytic capacitor mcgpr63v477m13x26-rh multicomp c16 1.1 pf chip capacitor atc100b1r1bt500xt atc r1, r2 3 ? , 1/4 w chip resistors rc1206fr-073rl yageo pcb rogers ro4350b, 0.020 ? , ? r =3.66 d65896 mtl
a2t21s160--12sr3 5 rf device data freescale semiconductor, inc. typical characteristics irl, input return loss (dbc) ?21 ?9 ?12 ?15 ?18 ?24 2060 f, frequency (mhz) figure 3. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 38 watts avg. 17.8 18.8 18.7 18.6 ?34 35 34.5 34 33.5 ?29 ?30 ?31 ?32 ? d , drain efficiency (%) g ps , power gain (db) 18.5 18.4 18.3 18.2 18.1 18 17.9 2080 2100 2120 2140 2160 2180 2200 2220 33 ?33 acpr (dbc) figure 4. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 ?75 0 ? 15 ? 30 ? 60 1 200 imd, intermodulatio n distortion (dbc) ? 45 figure 5. output peak--to--average ratio compression (parc) versus output power p out , output power (watts) ?1 ?3 20 0 ?2 ?4 output compression at 0.01% probability on ccdf (db) 10 30 40 60 15 45 40 35 30 25 20 ? d ? drain efficiency (%) 50 ? d parc acpr (dbc) ?40 ?28 ?30 ?32 ?36 ?34 ?38 18.6 g ps , power gain (db) 18.4 18.2 18 17.8 17.6 17.4 g ps ?5 1 acpr ? d parc g ps v dd =28vdc,p out =38w(avg.),i dq = 600 ma single--carrier w--cdma, 3.84 mhz channel bandwidth v dd =28vdc,p out = 10 w (pep) i dq = 600 ma, two--tone measurements (f1 + f2)/2 = center frequency of 2140 mhz im5--u im7--l im7--u 100 ?1 db = 21 w im5--l im3--u im3--l ?2 db = 28 w ?3 db = 37 w input signal par = 9.9 db @ 0.01% probab ility on ccdf v dd =28vdc,i dq = 600 ma, f = 2140 mhz single--carrier w--cdma, 3.84 mhz channel bandwidth acpr input signal par = 9.9 db @ 0.01% pr obability on ccdf parc (db) ?3.4 ?3 ?3.1 ?3.2 ?3.3 ?3.5 irl
6 rf device data freescale semiconductor, inc. a2t21s160--12sr3 typical characteristics 1 p out , output power (watts) avg. figure 6. single--carrier w--cdma power gain, drain efficiency and acpr versus output power ?20 ?25 10 22 0 60 50 40 30 20 ? d , drain efficiency (%) g ps , power gain (db) 20 18 10 200 10 ?45 acpr (dbc) 16 14 12 ?15 ?30 ?35 ?40 figure 7. broadband frequency response 6 24 f, frequency (mhz) v dd =28vdc p in =0dbm i dq = 600 ma 18 15 12 gain (db) 21 9 1550 1700 1850 2000 2150 2300 2450 2600 2750 gain acpr ? d g ps 2110 mhz v dd =28vdc,i dq = 600 ma single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0.01% probab ility on ccdf 100 2140 mhz 2170 mhz 2110 mhz 2140 mhz 2170 mhz 2110 mhz 2140 mhz 2170 mhz -- 2 5 5 0 ?5 -- 1 0 -- 1 5 -- 2 0 irl (db) irl
a2t21s160--12sr3 7 rf device data freescale semiconductor, inc. table 7. load pull performance ? maximum power tuning v dd =28vdc,i dq = 793 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 2.40 ? j5.03 2.40 + j4.74 1.71 ? j4.45 18.6 52.5 178 54.8 ?14 2140 2.86 ? j5.52 2.96 + j5.22 1.70 ? j4.29 18.8 52.6 181 55.4 ?15 2170 4.27 ? j6.11 4.03 + j5.56 1.71 ? j4.44 18.8 52.6 182 54.8 ?15 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 2.40 ? j5.03 2.33 + j5.03 1.72 ? j4.68 16.3 53.3 214 56.3 ?18 2140 2.86 ? j5.52 2.96 + j5.56 1.71 ? j4.64 16.4 53.3 216 56.1 ?19 2170 4.27 ? j6.11 4.13 + j6.04 1.72 ? j4.67 16.5 53.3 215 55.9 ?19 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of the device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 8. load pull performance ? maximum drain efficiency tuning v dd =28vdc,i dq = 793 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 2.40 ? j5.03 2.71 + j5.02 3.37 ? j2.33 21.8 50.1 102 66.7 ?21 2140 2.86 ? j5.52 3.42 + j5.53 2.99 ? j2.05 22.1 49.9 98 66.6 ?22 2170 4.27 ? j6.11 4.77 + j5.85 2.70 ? j2.14 22.1 50.0 100 66.0 ?23 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 2.40 ? j5.03 2.65 + j5.25 3.37 ? j2.33 19.8 50.8 120 68.0 ?28 2140 2.86 ? j5.52 3.40 + j5.87 2.78 ? j2.07 20.1 50.6 115 67.9 ?31 2170 4.27 ? j6.11 4.90 + j6.17 2.70 ? j2.14 20.1 50.7 116 67.4 ?31 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of the device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
8 rf device data freescale semiconductor, inc. a2t21s160--12sr3 p1db ? typical load pull contours ? 2140 mhz 22.5 3 1 5 1.5 4.5 3.5 4 22.5 3 1 5 1.5 4.5 3.5 4 22.5 3 1 5 1.5 4.5 3.5 4 ?5 1 ?1 0 ?3 ?4 ?2 ?5 1 ?1 0 ?3 ?4 ?2 ?5 1 ?1 0 ?3 ?4 ?2 imaginary ( ? ) imaginary ( ? ) imaginary ( ? ) note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 8. p1db load pull output power contours (dbm) real ( ? ) ?5 1 ?1 imaginary ( ? ) 22.5 3 1 5 0 ?3 ?4 1.5 figure 9. p1db load pull efficiency contours (%) real ( ? ) figure 10. p1db load pull gain contours (db) real ( ? ) figure 11. p1db load pull am/pm contours ( ?) real ( ? ) 4.5 ?2 3.5 4 48.5 49 p e 49.5 50 50.5 51 51.5 52 52.5 50 52 54 56 58 60 62 p e 50 64 66 56 19.5 19 20 20.5 21 21.5 22 22.5 23 p e ?16 ?14 p e ?14 ?18 ?20 ?22 ?24 ?26 ?16 ?28 ?30
a2t21s160--12sr3 9 rf device data freescale semiconductor, inc. p3db ? typical load pull contours ? 2140 mhz 22.5 3 1 5 1.5 4.5 3.5 4 22.5 3 1 5 1.5 4.5 3.5 4 22.5 3 1 5 1.5 4.5 3.5 4 ?5 1 ?1 0 ?3 ?4 ?2 ?5 1 ?1 0 ?3 ?4 ?2 ?5 1 ?1 0 ?3 ?4 ?2 imaginary ( ? ) imaginary ( ? ) imaginary ( ? ) note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 12. p3db load pull output power contours (dbm) real ( ? ) ?5 1 ?1 imaginary ( ? ) 22.5 3 1 5 0 ?3 ?4 1.5 figure 13. p3db load pull efficiency contours (%) real ( ? ) figure 14. p3db load pull gain contours (db) real ( ? ) figure 15. p3db load pull am/pm contours ( ?) real ( ? ) 4.5 ?2 3.5 4 p e 49.5 50 50.5 51 51.5 52 52.5 53 52 54 56 58 60 62 64 66 p e 52 58 60 62 17.5 17 18 18.5 19 19.5 20 20.5 21 p e ?18 ?20 ?22 ?24 ?26 ?28 ?30 p e ?32 ?34
10 rf device data freescale semiconductor, inc. a2t21s160--12sr3 package dimensions
a2t21s160--12sr3 11 rf device data freescale semiconductor, inc.
12 rf device data freescale semiconductor, inc. a2t21s160--12sr3 product documentation, software and tools refer to the following resources to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? s2p file development tools ? printed circuit boards to download resources specific to a given part number: 1. go to http://www .freescale.com/rf 2. search by part number 3. click part number link 4. choose the desired resource from the drop down menu revision history the following table summarizes revisions to this document. revision date description 0 aug. 2015 ? initial release of data sheet
a2t21s160--12sr3 13 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including wit hout limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast is a trademark of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2015 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: a2t21s160--12s rev. 0, 8/2015

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